ace 8 6 2 8 b dual n - channel enhancement mode f i e l d e f f e c t t r a n si s t or with e s d p r o t e c t io n ver 1. 2 1 description the ACE8628B uses advanced trench technology to provide excellent r ds(on) and low gate charge. they offer operation over a wide gate drive range from 1.8v to 12v. it is esd protected. this device is suitable for use as a uni - directional or bi - directional load switch, facilitated by its common - drain conf iguration. features ? v ds 20 v ? i d =8a (v gs =4.5v) ? r ds(on ) <14 m ( v gs =4.5v) ? r ds(on ) <1 5 m ( v gs =4 v) ? r ds(on ) <1 7.5 m ( v gs = 3. 1 v) ? r ds(on ) < 21 m ( v gs = 2 .5v) ? esd protected: 2000v absolute maximum ratings parameter symbol max unit drain - source voltage v dss 2 0 v gate - source voltage v gss 12 v drain current ( continuous ) * ac t a =25 o c i d 8 a t a = 70 o c 6.4 drain current (pulse) * b i d m 30 a power dissipation t a =25 o c p d 2.5 w t a = 70 o c 1.6 operating and storage jun ction temperature range t j /t stg - 55/150 o c packaging type dfn3*3 - 8 l
ace 8 6 2 8 b dual n - channel enhancement mode f i e l d e f f e c t t r a n si s t or with e s d p r o t e c t io n ver 1.2 2 ordering i nformation ace 8628 b xx + h electrical characteristics t a =25 , unless otherwise noted . parameter symbol conditions min. typ. max. unit s t a t i c drain - source breakdown voltage v (br)dss v gs =0v, i d =250 ua 2 0 v gate leakage current i gss v ds =0v,v gs = 1 2 v 2 . 5 1 0 ua zero gate voltage drain current i dss v ds = 2 0 v, v gs =0v 1 ua gate threshold voltage v gs(th) v d s =v gs , i d s =250ua 0 . 4 0 . 5 1 1 v drain - source on - resistance r ds(on) v gs = 4.5 v, i d = 5 a 12.1 14 m v gs = 4 v, i d = 5 a 12.6 15 v gs = 3.1 v, i d = 5 a 13.5 17.5 v gs = 2 .5 v, i d = 2. 5 a 14.6 21 forward transconductance g fs v ds =5v, i d =8a 3 6 s diode forward voltage v sd i s d = 1 a, v gs =0v 0 . 6 3 1 v maximum body - dode continuous current i s 2 . 4 a switching t o t a l g a t e c h a r g e q g v g s = 4 . 5 v , v d s = 1 0 v , i d = 8 a 1 7 . 9 n c g a t e - s o u r c e c h a r g e q g s 4 . 1 g a t e - d r a i n c h a r g e q g d 5 . 6 turn - on time td(on) v gs = 5 v, r l = 1 . 5 , v ds = 1 0 v, r g en = 3 6 . 2 1 2 . 4 ns tr 1 2 . 7 2 5 . 4 tu rn - off time td(off) 5 1 . 7 1 0 3 . 4 tf 1 6 3 2 dynamic input capacitance ciss v gs =0v, v ds =10v, f=1mhz 1 8 1 0 pf output capacitance coss 2 3 2 reverse transfer capacitance crss 2 0 0 n n : d f n 3 * 3 - 8 l pb - free halogen - free
ace 8 6 2 8 b dual n - channel enhancement mode f i e l d e f f e c t t r a n si s t or with e s d p r o t e c t io n ver 1.2 3 n o t e : a . the value of r ja is measured with the device mounted on 1in2 fr - 4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application d epends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b . repetitive rating, pulse width limited by junction temperature. c . the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient . d . the static characteristics are obtained using <300 s pulses, duty cycle 0.5% max. e . these tests are performed with the device mounted on 1in2 fr - 4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve pro vides a single pulse rating. typical performance characteristics
ace 8 6 2 8 b dual n - channel enhancement mode f i e l d e f f e c t t r a n si s t or with e s d p r o t e c t io n ver 1.2 4 typical performance characteristics
ace 8 6 2 8 b dual n - channel enhancement mode f i e l d e f f e c t t r a n si s t or with e s d p r o t e c t io n ver 1.2 5 typical performance characteristics
ace 8 6 2 8 b dual n - channel enhancement mode f i e l d e f f e c t t r a n si s t or with e s d p r o t e c t io n ver 1.2 6 packing information dfn3*3 - 8l
ace 8 6 2 8 b dual n - channel enhancement mode f i e l d e f f e c t t r a n si s t or with e s d p r o t e c t io n ver 1.2 7 n otes ace does not assume any respons ibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, ( a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace t echnology co., ltd. http://www.ace - ele.com/
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